The Indiana plant is expected to begin mass-producing next-generation high-bandwidth memory in the second half of 2029.
SK Hynix held a groundbreaking ceremony for a more than $4 billion advanced memory-packaging facility in Indiana, its first US base for high-bandwidth memory.
The 133.5-acre plant in West Lafayette is expected to open its cleanroom by October 2028 and begin mass production of next-generation HBM in the second half of 2029, Chief Executive Officer Kwak Noh-Jung said.
When fully operational, the facility is expected to employ about 1,000 people and create roughly 7,000 direct and indirect jobs through construction, operations and related industries.
HBM is used in Nvidia’s advanced artificial-intelligence accelerators. SK Hynix said wafers produced in South Korea will be shipped to Indiana for packaging and testing before being supplied to US customers.
The project is supported by the US Chips and Science Act, under which SK Hynix could receive up to $458 million in direct funding and $500 million in loans.
SK Hynix is considering more than 100 suppliers for the project and has agreed with Purdue University to cooperate on HBM, system integration and advanced-packaging research.
